Friday, June 3rd, 2016

In many electronic circuits transistors have a key role, in which they are usually used either as a switch or an amplifier. Semiconductor nanomaterial are used to make these new age transistors channels. This market is anticipated to see a double digit compounded annual growth rate over the next five years.

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It is expected that 3D Transistors is set to become the standard because is a novel transistor that is manufactured by using Nano wires in comparison to conventional usage of silicon. The growth of 3D Transistors is likely to alter the dynamics of semiconductor production industry. 3D transistors manufacturing process involves top-down method, wherein components of the transistor are engraved on the transistor's base. The Nano wires, made of gallium, iridium as well as arsenide semiconductors, are coated with a thinner dielectric made of lanthanum aluminate for executing the gate operation effectively with decreased voltage requirements.

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Market segmentation is done on the basis of type, material, application and geography. According to type, the market is segmented into Metal-Oxide Semiconductor Field Effect Transistor (MOSFET), High Electron Mobility Transistor (HEMT), InAs Nanowire MOSFET (NWFET), Hetero junction Bipolar Transistor (HBT), and Others. On the basis of material, segmentation is done into Gallium Nitride (GaN), Indium Arsenide (InAs), Indium Phosphide (InP), Gallium Arsenide (GaAs). It has many applications which include Microwave systems, Aerospace, 3D-Enabled Smartphones, Satellite, Netbooks, Ultrabooks and Media Tablets. Geographically, the Global Next Generation Transistor Market has been segmented into five regions, namely, North America, Europe, Asia-Pacific, Middle East and Africa (MEA) and Latin America.

The major market players in the next generation transistor market include ST Microelectronics, Infineon Technologies, Texas Instruments, Avago Technologies, Focus Microwave, Advance Linear Devices, Inc., TriQuint Semiconductor, Axcera, Deveo Oy, Fairchild Semiconductors.

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Table of content

1. Introduction

    1.1 Research methodology

    1.2 Key Findings

    1.3 Report Description

2. Executive Summary

3. Market Overview & Dynamics

3.1 Introduction

    3.2 Drivers

    3.3 Restraints

    3.4 Porter’s Five Forces Analysis

      3.4.1 Bargaining power of Suppliers

      3.4.2 Bargaining power of Buyers

      3.4.3 Degree of Competition

      3.4.4 Threat of Substitution

      3.4.5 Threat of new entrants

4. Technology Snapshot

5. Market Segmentation

    5.1 By Type

      5.1.1 High Electron Mobility Transistor (HEMT)

      5.1.2 Hetero Junction Bipolar Transistor (HBT)

      5.1.3 Metal-Oxide Semiconductor Field Effect Transistor (MOSFET)

      5.1.4 InAs Nanowire MOSFET (NWFET)

      5.1.5 Others

    5.2 By Material

      5.2.1 Indium Arsenide (InAs)

      5.2.2 Indium Phosphide (InP)

      5.2.3 Gallium Nitride (GaN)

      5.2.4 Gallium Arsenide (GaAs)

    5.3 By Application

5.3.1 Microwave systems

5.3.2 Aerospace

5.3.3 3D-Enabled Smartphones

5.3.4 Satellite

      5.3.5 Netbooks

      5.3.6 Ultrabooks

      5.3.7 Media Tablets

6. Market Segmentation, By Region

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